Self-assembly of C₆₀ on a ZnTPP/Fe(001)–p(1 × 1)O substrate: observation of a quasi-freestanding C₆₀ monolayer

• Guglielmo Albani,
• Michele Capra,
• Alessandro Lodesani,
• Alberto Calloni,
• Gianlorenzo Bussetti,
• Marco Finazzi,
• Franco Ciccacci,
• Alberto Brambilla,
• Lamberto Duò and
• Andrea Picone

Beilstein J. Nanotechnol. 2022, 13, 857–864, doi:10.3762/bjnano.13.76

• compact molecular film is crucial to obtain high-performance devices, since an efficient charge carrier transport is hindered by morphological defects, such as grain boundaries or pinholes [10][11]. Moreover, crystalline and well-ordered layers are particularly suitable for spatially averaging

Modeling a multiple-chain emeraldine gas sensor for NH₃ and NO₂ detection

• Hana Sustkova and
• Jan Voves

Beilstein J. Nanotechnol. 2022, 13, 721–729, doi:10.3762/bjnano.13.64

• , as seen in the I–V characteristic obtained through the extended Hückel method, in the saturated part, ballistic charge carrier transport of one particle takes place. Thus, for the relative resistance change data, only the initial part of the I–V diagram was taken into account. Also, the numerical

Nanoporous and nonporous conjugated donor–acceptor polymer semiconductors for photocatalytic hydrogen production

• Zhao-Qi Sheng,
• Yu-Qin Xing,
• Yan Chen,
• Guang Zhang,
• Shi-Yong Liu and
• Long Chen

Beilstein J. Nanotechnol. 2021, 12, 607–623, doi:10.3762/bjnano.12.50

• counterparts to promote photocatalytic hydrogen evolution as long as the charge carrier transport was not compromised by the 3D structures. This claim was exemplified by the 9,9'-spirobifluorene–FSO-based porous polymer P63 (Figure 8), which exhibited the best catalytic performance under visible light among

Boosting of photocatalytic hydrogen evolution via chlorine doping of polymeric carbon nitride

• Malgorzata Aleksandrzak,
• Michalina Kijaczko,
• Wojciech Kukulka,
• Daria Baranowska,
• Martyna Baca,
• Beata Zielinska and
• Ewa Mijowska

Beilstein J. Nanotechnol. 2021, 12, 473–484, doi:10.3762/bjnano.12.38

• hydrogen evolution reaction from water compared to pristine PCN. The investigation showed that the enhanced photocatalytic activity was attributed to an improved photogenerated charge transport and separation. Here, chlorine atoms could act as a charge carrier transport bridge between the carbon nitride

• . It further indicates that Cl doping can promote transfer and separation of the photogenerated carriers [55], which agrees with the photoluminescence spectroscopy results and transient photocurrent response. The improved transport and separation can be affected by Cl atoms acting as a charge carrier

• transport bridge between the layers of carbon nitride [45][55]. The presented study revealed that the polycondensation of melamine with 2-chloro-4,6-diamino-1,3,5-triazine leads to formation of Cl-doped polymeric carbon nitride. The presented material showed improved photocatalytic properties in the

Interfacial charge transfer processes in 2D and 3D semiconducting hybrid perovskites: azobenzene as photoswitchable ligand

• Nicole Fillafer,
• Tobias Seewald,
• Lukas Schmidt-Mende and
• Sebastian Polarz

Beilstein J. Nanotechnol. 2020, 11, 466–479, doi:10.3762/bjnano.11.38

• properties in detail focussing in particular on photoswitching and charge-carrier transport. Results and Discussion Preparation and characterization of photoswitchable ligands As a proof of concept four suitable azobenzene ligands were synthesized. The preparation of the compounds using standard organic

Nontoxic pyrite iron sulfide nanocrystals as second electron acceptor in PTB7:PC₇₁BM-based organic photovoltaic cells

• Olivia Amargós-Reyes,
• José-Luis Maldonado,
• Omar Martínez-Alvarez,
• María-Elena Nicho,
• José Santos-Cruz,
• Juan Nicasio-Collazo,
• Irving Caballero-Quintana and
• Concepción Arenas-Arrocena

Beilstein J. Nanotechnol. 2019, 10, 2238–2250, doi:10.3762/bjnano.10.216

• the charge carrier transport and recombination in the devices based on PTB7:PC71BM and PTB7:PC71BM:FeS2 with 0.5 wt % FeS2, impedance spectroscopy (IS) was conducted. IS is an important technique for monitoring charge carrier transport and recombination processes in solar cells [59]. These

Review of advanced sensor devices employing nanoarchitectonics concepts

• Katsuhiko Ariga,
• Tatsuyuki Makita,
• Masato Ito,
• Taizo Mori,
• Shun Watanabe and
• Jun Takeya

Beilstein J. Nanotechnol. 2019, 10, 2014–2030, doi:10.3762/bjnano.10.198

• alkyl chains. Long-range ordered π-conjugated columns in densely packed arrays of the pentathiophene core confine charge carrier transport to one direction. The charge generation and transport can be effectively maximized by this carrier transport confinement. The fabricated field-effect transistor

Materials nanoarchitectonics at two-dimensional liquid interfaces

• Katsuhiko Ariga,
• Michio Matsumoto,
• Taizo Mori and
• Lok Kumar Shrestha

Beilstein J. Nanotechnol. 2019, 10, 1559–1587, doi:10.3762/bjnano.10.153

• -workers [249]. Photoluminescence of the one-dimensional Lu2@C82 nanorods was remarkably enhanced compared to the pristine Lu2@C82 powder. The increased charge carrier transport would be also useful for applications with photoelectric purposes such as photodetectors. 4.3 Two- and three-dimensional, and

Electroluminescence and current–voltage measurements of single-(In,Ga)N/GaN-nanowire light-emitting diodes in a nanowire ensemble

• David van Treeck,
• Johannes Ledig,
• Gregor Scholz,
• Jonas Lähnemann,
• Mattia Musolino,
• Abbes Tahraoui,
• Oliver Brandt,
• Andreas Waag,
• Henning Riechert and
• Lutz Geelhaar

Beilstein J. Nanotechnol. 2019, 10, 1177–1187, doi:10.3762/bjnano.10.117

• -based core–shell NW structures grown by metalorganic chemical vapor deposition it was found that the FWHM increases with decreasing emission energy [13]. In order to better understand the charge-carrier transport in single-NW LEDs, in Figure 5a we analyze the I–V curves for the NWs C, E, and G, as well

Lead-free hybrid perovskites for photovoltaics

• Oleksandr Stroyuk

Beilstein J. Nanotechnol. 2018, 9, 2209–2235, doi:10.3762/bjnano.9.207

• grains with a minimized grain boundary area and surface defects seems to be of much lower significance for the Sn-based HPs, than for their lead-based counterparts. We can, therefore, expect a similar photovoltaic efficiency from micro- and nanometer Sn-HP crystals and try to affect the charge carrier

• transport through the HP/ETL and HP/HTL interfaces by tailoring the HP morphology on the nanometer scale. It was also found that the size-selected Cs2SnI6 NCs (12–49 nm) are characterized by a much smaller effective electron mass (0.12m0) as compared to the bulk HP (0.56m0) [130]. Therefore, one might

Electrospun one-dimensional nanostructures: a new horizon for gas sensing materials

• Muhammad Imran,
• Nunzio Motta and
• Mahnaz Shafiei

Beilstein J. Nanotechnol. 2018, 9, 2128–2170, doi:10.3762/bjnano.9.202

• ratio, high surface active sites, high specific surface area and reactivity [12][13]. Among these nanostructured materials, one-dimensional (1D) materials are known to be highly suitable candidates due to their higher surface energy, increased number of reactive sites, effective charge carrier transport

Non-equilibrium electron transport induced by terahertz radiation in the topological and trivial phases of Hg_1−xCd_xTe

• Alexandra V. Galeeva,
• Alexey I. Artamkin,
• Alexey S. Kazakov,
• Sergey N. Danilov,
• Sergey A. Dvoretskiy,
• Nikolay N. Mikhailov,
• Ludmila I. Ryabova and
• Dmitry R. Khokhlov

Beilstein J. Nanotechnol. 2018, 9, 1035–1039, doi:10.3762/bjnano.9.96

• carrier transport. Laser terahertz probing is known to be a powerful tool that may provide an insight into the electron dynamics in semiconductors, particularly, in topological insulators [9][10][11]. Study of non-equilibrium processes in Hg1−xCdxTe in the terahertz spectral range is additionally

• contrast to most of the 3D topological insulators, Hg1−xCdxTe solid solutions are characterized by relatively low free carrier concentration values in the bulk, and may be therefore considered as good candidates for a case study focused on determination of the topological state contribution to the charge

The role of ligands in coinage-metal nanoparticles for electronics

• Ioannis Kanelidis and
• Tobias Kraus

Beilstein J. Nanotechnol. 2017, 8, 2625–2639, doi:10.3762/bjnano.8.263

• ) to 750 S/cm as illustrated in Figure 5. The temperature profiles of the studied films all showed linear changes in conductivity that indicate a classical Arrhenius-type activated charge-carrier transport mechanism [114]. 3.2 Linking Functional ligands that cross-link particles after their deposition

Parylene C as a versatile dielectric material for organic field-effect transistors

• Tomasz Marszalek,
• Maciej Gazicki-Lipman and
• Jacek Ulanski

Beilstein J. Nanotechnol. 2017, 8, 1532–1545, doi:10.3762/bjnano.8.155

• only used as a gate dielectric material but it also serves as device flexible substrate. Such a flexible substrate allows one to investigate the influence of mechanical bending on charge carrier transport in the zone-cast layer of tetrakis(alkylthio)tetrathiafulvalene [18]. Bending tests carried out

• demonstrate how important it is to select a compatible dielectric material with reduced number of charge traps [2]. The effect of the gate dielectric material on charge-carrier transport in single-crystal transistors was also discussed in the case of devices based on TTF derivatives, also characterized as a

• of the semiconductor layer is guaranteed. These results are in agreement with the reports presented for a series of transistors with silicon/silicon dioxide substrates of various surface roughness [47][48][49]. It was found, that charge-carrier transport in relatively thick (multilayer

Spin-chemistry concepts for spintronics scientists

• Konstantin L. Ivanov,
• Alexander Wagenpfahl,
• Carsten Deibel and
• Jörg Matysik

Beilstein J. Nanotechnol. 2017, 8, 1427–1445, doi:10.3762/bjnano.8.143

• OMAR effect is observed by monitoring the resistance of an organic material originating from the spin-dependent nature of charge carrier transport and recombination. The mechanism underlying OMAR is the same as for MARY. On the one hand, MARY is a more general term, since MARY is not supposed to be

Obtaining and doping of InAs-QD/GaAs(001) nanostructures by ion beam sputtering

• Sergei N. Chebotarev,
• Alexander S. Pashchenko,
• Leonid S. Lunin,
• Elena N. Zhivotova,
• Georgy A. Erimeev and
• Marina L. Lunina

Beilstein J. Nanotechnol. 2017, 8, 12–20, doi:10.3762/bjnano.8.2

• donor level is less and an electron is captured more quickly at levels in an InAs quantum dot and participates in radiative recombination acts. This increases the photoluminescence peak intensity. Dark I–V measurements It is clear that doping of the spacer layer affects the charge carrier transport from

Assembling semiconducting molecules by covalent attachment to a lamellar crystalline polymer substrate

• Rainhard Machatschek,
• Patrick Ortmann,
• Renate Reiter,
• Stefan Mecking and
• Günter Reiter

Beilstein J. Nanotechnol. 2016, 7, 784–798, doi:10.3762/bjnano.7.70

• . Thus, we could functionalize these layers of nanocrystals by chemically grafting semiconducting molecules that interact via π-orbitals. For a densely grafted layer of such molecules, potentially significant overlap between their π-orbitals can be achieved, resulting in efficient charge carrier

• transport [20] parallel to the nanocrystal surface. For a proof of principle, an amino functionalized perylene 3,4-dicarboximide derivative (1) was chosen. We synthesized molecules 1 according to the procedure given in [21]. For an isolated molecule 1, fluorescence emission is quenched due to the presence

Morphological and structural characterization of single-crystal ZnO nanorod arrays on flexible and non-flexible substrates

• Omar F. Farhat,
• Mohd M. Halim,
• Mat J. Abdullah,
• Mohammed K. M. Ali and
• Nageh K. Allam

Beilstein J. Nanotechnol. 2015, 6, 720–725, doi:10.3762/bjnano.6.73

• superior to polycrystalline architectures in a unique way: the decrease of the number of grain boundaries ameliorates charge-carrier transport by permitting a direct and quick charge transport pathway and thus decreases the carrier path length, which in turn decreases recombination losses. To this end

Electrical contacts to individual SWCNTs: A review

• Wei Liu,
• Christofer Hierold and
• Miroslav Haluska

Beilstein J. Nanotechnol. 2014, 5, 2202–2215, doi:10.3762/bjnano.5.229

• challenges for widespread application of CNFETs are additionally discussed. Keywords: charge carrier transport; CNFET; electrical contact; metal–SWCNT interface; SWCNT; Review Introduction The unique crystalline and electronic structure of single-walled carbon nanotubes (SWCNTs) afford extraordinary

• mechanical properties [1][2][3] as well as thermal and electrical conductivity [4][5], enabling ballistic charge carrier transport up to the microscale at room temperature [6][7]. The emergence of carbon nanotube field-effect transistors (CNFETs) using SWCNTs as the device channel provides a possible

• ) or even with Ohmic contacts are often required. The principles of charge carrier transport developed for Si-based devices must be reconsidered for SWCNT-based devices due to the reduced dimensionality of the metal–SWCNT interface. In this review, the technological progress in the improvement of the

Advances in NO₂ sensing with individual single-walled carbon nanotube transistors

• Kiran Chikkadi,
• Matthias Muoth,
• Cosmin Roman,
• Miroslav Haluska and
• Christofer Hierold

Beilstein J. Nanotechnol. 2014, 5, 2179–2191, doi:10.3762/bjnano.5.227

• Kiran Chikkadi Matthias Muoth Cosmin Roman Miroslav Haluska Christofer Hierold Micro and Nanosystems, Department of Mechanical and Process Engineering, ETH Zurich, Switzerland 10.3762/bjnano.5.227 Abstract The charge carrier transport in carbon nanotubes is highly sensitive to certain molecules

Experimental techniques for the characterization of carbon nanoparticles – a brief overview

• Wojciech Kempiński,
• Szymon Łoś,
• Mateusz Kempiński and
• Damian Markowski

Beilstein J. Nanotechnol. 2014, 5, 1760–1766, doi:10.3762/bjnano.5.186

• carriers within the nanoparticles, which can be observed with the EPR technique. This in turn can be well-correlated with the four-point electrical conductivity measurements which directly show the character of the charge carrier transport within the examined structures. Keywords: carbon nanoparticles

• ; charge carrier transport; host–guest interactions; spin localization; Review Introduction Quasi-graphitic carbon nanoparticles (CNs) were found to show very interesting behavior with respect to the localization of charge carriers. Due to their large specific surface area, CNs are very sensitive to the

• spintronics. Localization of charge carriers (spins) within the CNs is the crucial phenomenon for such applications [1][2][3]. Dresselhaus’ group described the process of charge carrier transport within the carbon nano-textures using two models – Coulomb gap variable range hopping (CGVRH) and charge energy

Quantum size effects in TiO₂ thin films grown by atomic layer deposition

• Massimo Tallarida,
• Chittaranjan Das and
• Dieter Schmeisser

Beilstein J. Nanotechnol. 2014, 5, 77–82, doi:10.3762/bjnano.5.7

• influenced by quantum size effects. The modified electronic properties may play an important role in charge carrier transport and separation, and increase the efficiency of energy conversion systems. Keywords: atomic layer deposition (ALD); charge transfer multiplet; covalency; energy conversion; quantum

• purity [4]. The growth of TiO2 by ALD is a well-studied process and has been recently reviewed [5]. Charge carrier transport and separation, which strongly depend on interface and surface properties [6][7], are among the most important aspects of energy conversion processes. Therefore the further

• of orbital overlap, in TM oxides is a particularly important property for understanding the efficiency of photo-electrodes, as it influences the charge carrier transport mechanism. Covalent materials are desirable because separation and transport of electrons and holes are supported, while the

Kelvin probe force microscopy of nanocrystalline TiO₂ photoelectrodes

• Alex Henning,
• Gino Günzburger,
• Res Jöhr,
• Yossi Rosenwaks,
• Biljana Bozic-Weber,
• Catherine E. Housecroft,
• Edwin C. Constable,
• Ernst Meyer and
• Thilo Glatzel

Beilstein J. Nanotechnol. 2013, 4, 418–428, doi:10.3762/bjnano.4.49

• is sensitive to potential drops in the entire sample, the measurements give insights into charge-carrier transport processes of the particle network. Figure 7 shows the time evolution of the measured CPD values after the turning on and off of the laser light illumination with a wavelength of 408 nm

Influence of diffusion on space-charge-limited current measurements in organic semiconductors

• Thomas Kirchartz

Beilstein J. Nanotechnol. 2013, 4, 180–188, doi:10.3762/bjnano.4.18

• reasonably accurate mobility values. Keywords: current–voltage curves; electron-only device; drift–diffusion; mobility; simulation; traps; Introduction A frequently used method to analyze charge carrier transport in organic semiconductors is based on space-charge-limited current measurements performed on

Low-temperature synthesis of carbon nanotubes on indium tin oxide electrodes for organic solar cells

• Andrea Capasso,
• Luigi Salamandra,
• Aldo Di Carlo,
• John M. Bell and
• Nunzio Motta

Beilstein J. Nanotechnol. 2012, 3, 524–532, doi:10.3762/bjnano.3.60

• induce cross linking between the inner shells (walls) of the tubes through sp3 bond formation, facilitating charge-carrier hopping to inner shells [28]. Such intershell bridging provides additional charge-carrier transport pathways, offsetting the effect of a conductivity decrease induced by defect